complementary silicon power transistors . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. ? low collectoremitter saturation voltage v ce(sat) = 1.0 v (max) @ 8.0 a ? fast switching speeds ? complementary pairs simplifies designs ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? ??? ??? ???????? ???????? d44h or d45h ??? ??? ???????????? ???????????? rating ??? ??? symbol ????? ????? 8 ???? ???? 10, 11 ??? ??? unit ???????????? ???????????? collectoremitter voltage ??? ??? v ceo ????? ????? 60 ???? ???? 80 ??? ??? vdc ???????????? ???????????? emitter base voltage ??? ??? v eb ???????? ???????? 5.0 ??? ??? vdc ???????????? ? ?????????? ? ???????????? collector current e continuous e peak (1) ??? ? ? ? ??? i c ???????? ? ?????? ? ???????? 10 20 ??? ? ? ? ??? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c @ t a = 25 c ??? ? ? ? ??? p d ???????? ? ?????? ? ???????? 50 1.67 ??? ? ? ? ??? watts ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ??? ? ? ? ??? t j , t stg ???????? ? ?????? ? ???????? 55 to 150 ??? ? ? ? ??? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ???? ???? max ????? ????? unit ?????????????????????? ?????????????????????? thermal resistance, junction to case ????? ????? r q jc ???? ???? 2.5 ????? ????? c/w ?????????????????????? ?????????????????????? thermal resistance, junction to ambient ????? ????? r q ja ???? ???? 75 ????? ????? c/w ?????????????????????? ?????????????????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ????? ????? t l ???? ???? 275 ????? ????? c (1) pulse width 6.0 ms, duty cycle 50%. ????????????????????????????????? ????????????????????????????????? electrical characteristics (t j = 25 c unless otherwise noted) ?????????????????? ?????????????????? characteristic ?????? ?????? symbol ???? ???? min ????? ????? max ???? ???? unit ?????????????? ? ???????????? ? ?????????????? dc current gain (v ce = 1.0 vdc, i c = 2.0 adc) ????? ? ??? ? ????? d44h10 d45h10 ?????? ? ???? ? ?????? h fe ???? ? ?? ? ???? 35 ????? ? ??? ? ????? e ???? ? ?? ? ???? e ?????????????? ? ???????????? ? ?????????????? ????? ? ??? ? ????? d44h8,11 d44h8,11 ?????? ? ???? ? ?????? ???? ? ?? ? ???? 60 ????? ? ??? ? ????? e ???? ? ?? ? ???? ?????????????? ?????????????? (v ce = 1.0 vdc, i c = 4.0 adc) ????? ????? d44h10 d45h10 ?????? ?????? ???? ???? 20 ????? ????? e ???? ???? ?????????????? ? ???????????? ? ?????????????? ????? ? ??? ? ????? d44h8,11 d45h8,11 ?????? ? ???? ? ?????? ???? ? ?? ? ???? 40 ????? ? ??? ? ????? e ???? ? ?? ? ???? preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 3 1 publication order number: d44h/d d44h series d45h series 10 ampere complementary silicon power transistors 60, 80 volts *on semiconductor preferred device * npn * pnp case 221a06 to220ab style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
d44h series d45h series http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v ce = rated v ceo , v be = 0) ????? ? ??? ? ????? i ces ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 10 ??? ? ? ? ??? m a ??????????????????? ? ????????????????? ? ??????????????????? emitter cutoff current (v eb = 5.0 vdc) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 100 ??? ? ? ? ??? m a ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 8.0 adc, i b = 0.4 adc) d44h/d45h8,11 (i c = 8.0 adc, i b = 0.8 adc) d44h/d45h10 ????? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 1.0 1.0 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ??????????????????? baseemitter saturation voltage (i c = 8.0 adc, i b = 0.8 adc) ????? ????? v be(sat) ???? ???? e ??? ??? e ???? ???? 1.5 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collector capacitance (v cb = 10 vdc, f test = 1.0 mhz) d44h series d45h series ????? ? ??? ? ? ??? ? ????? c cb ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? 130 230 ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? pf ??????????????????? ? ????????????????? ? ??????????????????? gain bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f = 20 mhz) d44h series d45h series ????? ? ??? ? ????? f t ???? ? ?? ? ???? e e ??? ? ? ? ??? 50 40 ???? ? ?? ? ???? e e ??? ? ? ? ??? mhz ????????????????????????????????? ? ??????????????????????????????? ? ????????????????????????????????? switching times ??????????????????? ? ????????????????? ? ??????????????????? delay and rise times (i c = 5.0 adc, i b1 = 0.5 adc) d44h series d45h series ????? ? ??? ? ????? t d + t r ???? ? ?? ? ???? e e ??? ? ? ? ??? 300 135 ???? ? ?? ? ???? e e ??? ? ? ? ??? ns ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? storage time (i c = 5.0 adc, i b1 = i b2 = 0.5 adc) d44h series d45h series ????? ? ??? ? ? ??? ? ????? t s ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? 500 500 ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? ns ??????????????????? ? ????????????????? ? ??????????????????? fall time (i c = 5.0 adc, i b1 = 102 = 0.5 adc) d44h series d45h series ????? ? ??? ? ????? t f ???? ? ?? ? ???? e e ??? ? ? ? ??? 140 100 ???? ? ?? ? ???? e e ??? ? ? ? ??? ns 100 1.0 v ce , collector-emitter voltage (volts) 5.0 10 t c 70 c duty cycle 50% i c , collector current (amps) 2.0 3.0 20 30 50 100 1.0 7.0 d44h/45h8 d44h/45h10,11 figure 1. maximum rated forward bias safe operating area 70 1.0 m s dc 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 20 30 50 10 m s 100 m s 1.0 ms
d44h series d45h series http://onsemi.com 3 package dimensions case 221a09 issue aa to220 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
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